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Title: Real-time analysis and control of melt-chemistry in crystal growing operations
Claims: What is claimed is: 1. A method of controlling the resistivity of each of a plurality of single-crystalline ingots of desired size which may be successively grown from a melt which may be successively reconstituted as desired for each ingot grown, wherein the melt contains polycrystalline material and an impurity, and wherein the improvement comprises the steps of: maintaining at least a portion of the melt in its melted state for each ingot grown from the melt which portion of melt may be retained and reconstituted for a successive ingot after an ingot is grown; withdrawing a sample of the maintained melt, the composition of the melt varying as a single-crystalline ingot is grown from the melt and varying in accordance with the freezing of the melt into an ingot; cooling the sample to solidify it into a polycrystalline structure; determining an electrical characteristic of the polycrystalline sample, which characteristic is indicative of the level of the impurity of the maintained melt and which level of the impurity is indicative of the resistivity of a single-crystalline ingot grown from the melt; comparing the determined electrical characteristic of the sample with a value of that electrical characteristic desired in an ingot; and reconstituting the maintained melt according to the comparison and according to the desired size of an ingot by adding an amount of polycrystalline material or of the impurity or of both to the maintained melt to control the resistivity of each of a plurality of single-crystalline ingots grown from the melt. 2. A method as recited in claim 1, wherein the impurity is a dopant and the sample is withdrawn by suction into a hollow member to produce a sample of known configuration. 3. A method as recited in claim 1, wherein the sample is rapidly cooled to solidify the sample. 4. A method as recited in claim 1, wherein the determining step is accomplished by performing a microwave absorption measurement on the sample to produce a value of microwave absorption at a particular frequency. 5. A method as recited in claim 4, including the additional step of converting the microwave absorption value into a value representing concentration of dopant impurities in the melt. 6. A method of controlling the resistivity of each of a plurality of single-crystalline semiconductor ingots of a desired size successively grown from a melt, which melt may be successively reconstituted as desired for each ingot grown to achieve substantial uniformity of resistivity among successively grown ingots, wherein the melt contains semiconductor polycrystalline material and a dopant, and wherein the improvement comprises the steps of: maintaining at least a portion of the melt in its melted state for each ingot grown from the melt which portion of melt may be retained and reconstituted for a successive ingot after an ingot is grown; inserting a refractory sample into the melt, the composition of the melt varying as a single-crystalline ingot is grown from the melt and varying in accordance with the freezing of the melt into an ingot; drawing by suction into the sampler a sample of the melt of known volume and configuration; rapidly cooling the sampler to rapidly solidify the sample into a polycrystalline structure; inserting the polycrystalline sample, while still contained in the sampler, into a waveguide means; transmitting microwave power within the waveguide means and through the sample while it is still contained in the sampler; measuring the microwave absorption of the contained sample at a predetermined microwave frequency; comparing the measured microwave absorption of the contained sample at the predetermined microwave frequency with a predetermined abosrption value at the same frequency for a contained sample taken from a melt containing a proper amount of dopant to produce an ingot of a desired resistivity; introducing an amount of dopant into the melt if the measured value is significantly less than the desired value; and introducing an amount of semiconductor material into the melt if the measured value is significantly greater than the desired value, whereby the resistivity of each of a plurality of single-crystalline ingots is controlled to achieve substantial uniformity of resistivity among successively grown ingots. 7. An apparatus for controlling the resistivity of each of a plurality of single-crystalline ingots of desired size which may be successively grown from a melt, which melt may be successively reconstituted as desired for each ingot grown, wherein the melt contains polycrystalline material and an impurity, and wherein the improvement comprises: means for maintaining at least a portion of the melt in its melted state for each ingot grown from the melt which portion of melt may be retained and reconstituted for a successive ingot after an ingot is grown; means for withdrawing a sample of the maintained melt, the composition of the melt varying as a single-crystalline ingot is grown from the melt and varying in accordance with the freezing of the melt into an ingot; means for cooling the sample to solidify it into a polycrystalline structure; means for determining an electrical characteristic of the polycrystalline sample which characteristic is indicative of the level of the impurity in the maintained melt and which level of the impurity in the maintained melt is indicative of the resistivity of a single-crystalline ingot grown from the melt; means for comparing the determined electrical characteristic of the sample with a value of that electrical characteristic desired in an ingot; and means for reconstituting the maintained melt according to the comparison and according to the desired size of an ingot by adding an amount of polycrystalline material or of the impurity or of both to the maintained melt to control the resistivity of each of a plurality of single-crystalline ingots grown from the melt. 8. An apparatus as recited in claim 7, wherein the means for withdrawing the sample is a hollow quartz member connected to a partial vacuum source and has a hollow rectangular portion for containing the sample of the polycrystalline melt, and wherein the determining means includes a slot adapted in size to receive the rectangular portion of the quartz member with the polycrystalline sample contained therein. Other info: Inventors: Lavigna, Robert J. (Bath, PA, US) Pearce, Charles W. (Allentown, PA, US) Reusser, Raymond E. (Bethlehem, PA, US) Application Number: 787135 Filing Date: 1977-04-13 Publication_date: 1979-01-16 Assignee: Western Electric Company, Inc. (New York, NY) Primary Class(es): 117/15 117/20, 117/21, 117/202, 117/916, 117/932 Other Classes: US Patent Ref:
Other Refs:
Proc. of the IRE, 5/61, Jacobs et al., pp. 928-932. 1962 IRE Cov., Jacobs et al., pp. 30-42. Journal of Physics E Scientific Instruments, 12/72, Nancollas et al., pp. 1186-1189. | |