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Title: Semiconductor photoelectric device
Claims: What is claimed is: 1. A semiconductor photoelectric device comprising: a silicon substrate having a main surface of (100) crystallographic orientation, a film of an insulating material selected from the group consisting of SiO.sub.2, Si.sub.3 N.sub.4, GeO.sub.2 and Al.sub.2 O.sub.3, deposited on said main surface of the substrate, a tin oxide layer deposited on said insulating material and defining a heterojunction barrier with said substrate, and metal electrodes deposited on said tin oxide layer and the substrate, said semiconductor device having a rectifying characteristic and being responsive to incident illumination received through said tin oxide layer at said heterojunction barrier. 2. The semiconductor photoelectric device in accordance with claim 1, in which said insulating material is SiO.sub.2. 3. The semiconductor photoelectric device in accordance with claim 2, in which the thickness of said insulating material layer is selected to be in the range of from 15A. to 30A. 4. The semiconductor photoelectric device in accordance with claim 2, in which the thickness of said insulating material layer is selected to be in the range of from 15A. to 25A. 5. The semiconductor photoelectric device in accordance with claim 2, in which the thickness of said insulating material layer is selected to be in the range of from 20 A. to 25 A. 6. The semiconductor photoelectric device in accordance with claim 1, in which specific resistivity of the substrate is selected to be in the range of from 1 to 20 ohm cm. 7. The semiconductor photoelectric device in accordance with claim 1, in which specific resistivity of the substrate is selected to be in the range of from 5 to 15 ohm cm. 8. The semiconductor photoelectric device in accordance with claim 1, in which specific resistivity of the substrate is selected to be in the range of from 7 to 13 ohm cm. 9. The semiconductor photoelectric device in accordance with claim 1, in which said tin oxide layer deposited on the main surface of said substrate comprises a plurality of separate layers deposited on a corresponding plurality of areas of said substrate with the periphery of each said separate layer spaced apart from the peripheries of adjacent said layers of said plurality thereof and defining a corresponding plurality of separate heterojunction barriers, each having a rectifying characteristic and which further comprises means connected to the peripheries of said separate tin oxide layers for forming an electrically common connection to the said plurality of separate tin oxide layers. 10. The semiconductor photoelectric device in accordance with claim 9, which further comprises a second insulating film of substantial thickness formed on said main surface of said substrate for defining said plurality of separate areas of said main surface of said substrate, said plurality of separate tin oxide layers deposited on said corresponding separate areas of said main surface of said substrate having the peripheral edges thereof overlying said second insulating film defining the corresponding area, and said respective peripheries of said adjacent ones of said plurality of tin oxide layers being spaced apart on said second insulating film, and said means forming an electrically common connection comprising a layer of conductive material deposited onto said peripheral edges of said separate layers, said second insulating film being of a thickness sufficient to electrically insulate said layer of conductive material from said substrate. 11. A semiconductor photoelectric device comprising: a silicon substrate having a main surface of (100) crystallographic orientation, a relatively thick insulating film formed on a portion of said main surface of said substrate in a pattern to define a plurality of exposed areas of said main surface of said substrate, a plurality of thin films of an insulating material selected from the group consisting of SiO.sub.2, Si.sub.3 N.sub.4, GeO.sub.2 and Al.sub.2 O.sub.3, deposited on respectively corresponding ones of said plurality of exposed areas of said main surface of said substrate and of a thickness in the range of from 15A. to 30A., a plurality of separate tin oxide layers deposited on respectively corresponding ones of said relatively thin films of said exposed areas with the peripheral edges of each said separate layer deposited on said relatively thick film of insulating material defining the corresponding said exposed area and spaced from the peripheral edges of adjacent said separate layers to define thereby a corresponding plurality of separate heterojunction barriers each having a rectifying characteristic, a metal electrode deposited on said peripheral edges of said plurality of separate tin oxide layers and on said relatively thick insulating material between said spaced apart peripheral edges of said plurality of separate tin oxide layers to provide a common electrical connection to said plurality of separate tin oxide layers, said relatively thick film being of a thickness sufficient to electrically insulate said metal electrode from said substrate, and said device being responsive to incident illumination received through said tin oxide layers at said heterojunction barriers. 12. The semiconductor photoelectric device as recited in claim 11, wherein said relatively thick insulating film includes a portion thereof deposited on the peripheral edge portion of said main surface of said substrate and further comprising electrical connectors connected to the metal electrode deposited on the peripheral edge portions of said tin oxide layers which are deposited on said portion of said second insulating film at said peripheral edge portion of said main surface of said substrate. 13. A semiconductor photoelectric device comprising: a silicon substrate havig a main surface of (100) crystallographic orientation, a relatively thick insulating film formed on a portion of said main surface of said substrate to define an exposed area of said main surface of said substrate, a thin film of an insulating material selected from the group consisting of SiO.sub.2, Si.sub.3 N.sub.4, GeO.sub.2 and Al.sub.2 O.sub.3, deposited on said exposed area of said main surface of said substrate and of a thickness in the range of from 15A. to 30A., a tin oxide layer deposited on said thin film of said exposed area, said tin oxide layer and said exposed area defining a heterojunction barrier having a rectifying characteristic, the peripheral edges of said tin oxide layer being deposited on said relatively thick film of insulating material and said relatively thick film electrically insulating said peripheral edges of said tin oxide layer from said main surface of said substrate, a metal electrode deposited on at least a portion of at least one peripheral edge of said tin oxide layer to provide an electrical connection to said tin oxide layer, and said device being responsive to incident illumination received through said tin oxide layer at said heterojunction barrier. Other info: Inventors: Tanimura, Shigeru (Kyoto, JA) Miura, Nobuaki (Oita, JA) Miyamoto, Mikizo (Nagaokakyo, JA) Application Number: 388148 Filing Date: 1973-08-14 Publication_date: 1976-04-20 Assignee: Omron Tateisi Electronics Co., Ltd. (JA) Primary Class(es): 257/443 136/255, 136/261, 257/449, 257/450, 257/457, 257/475, 257/627, 257/E31.084 Other Classes: US Patent Ref:
Other Refs: Other References: Solid-State Electronics, Metal-Silicon Schottky Barriers, by Turner, Vol. No. 3 pp. 291-300 Mar. 1968. | |