Title: Semiconductor photoelectric generator

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Claims: What is claimed is:

1. A semiconductor photoelectric generator comprising semiconductor photocells each having a doped region, a base region, a metal current lead to said base region; a metal current lead to said doped region; a working surface receiving incident radiation; rectifying barriers, at least one of said rectifying barriers being provided at a distance from said working surface not exceeding the diffusion length of minority current carriers in said base region; isotype p-p.sup.+ or n-n.sup.+ junctions provided in direct proximity to said working surface; said photocells having the shape of parallelepipeds, at least one linear dimension thereof being commensurate with the diffusion length of minority current carriers in said base region; all said current leads interconnecting said photocells into a generator.

2. A semiconductor photoelectric generator as claimed in claim 1, wherein said rectifying barriers are provided parallel to the surfaces that are opposite to said working surfaces, said current leads being disposed on said working surfaces and on the surfaces that are opposite to said working surfaces; said current leads on the surfaces opposite the working surfaces being arranged over the entire area of said surfaces.

3. A semiconductor photoelectric generator as claimed in claim 2, wherein said rectifying barriers are embodied as p-n junctions; said p-n junctions being disposed at a depth sufficient to eliminate the action of surface effects thereon.

4. A semiconductor photoelectric generator built around semiconductor photocells, each of said photocells comprising; a doped region; a base region; a metal current lead to said base region; a metal current lead to said doped region; a working surface receiving incident radiation; rectifying barriers, at least one of said rectifying barriers being provided at a distance from said working surface not exceeding the diffusion length of minority current carriers to said base region; an isotype p-p.sup.+or n-n.sup.+ junction provided in direct proximity to said working surface; an additional isotype junction, disposed parallel to the face that is inclined at an angle to said working surface; said photocells having the shape of microminiature parallelepipeds of which at least two linear dimensions are commensurate with the diffusion length of minority current carriers to said base region; all said current leads interconnecting said photocells into a generator.

5. A semiconductor photoelectric generator as claimed in claim 4, wherein said rectifying barriers are disposed parallel to at least one of the faces inclined at an angle to said working surface; each said photoconverters having another additional isotype junction disposed in direct proximity to the surface that is opposite to said working surface.

6. A semiconductor photoelectric generator as claimed in claim 5, wherein said rectifying barriers are embodied as p-n junctions; said p-n junctions being disposed at a depth sufficient for eliminating the influence of surface effects thereon.

7. A semiconductor photoelectric generator as claimed in claim 4, wherein said rectifying barriers are provided parallel to the surfaces which are opposite to the said working surfaces, said current leads are disposed in said working surfaces and on the surfaces that are opposite to said working surfaces; said current leads on the surfaces opposite to the working surfaces being disposed over the entire area of said surfaces.

8. A semiconductor photoelectric generator built around semiconductor photocells, each photocell comprising: a doped region; a base region; a working region which receives incident radiation; a metal current lead to said base region disposed over the entire area of the surface that is opposite to said working surface; a metal current lead to said doped region; rectifying barriers disposed parallel to the faces that are inclined at a certain angle to said working surface; an isotype p--p.sup.+ or n--n.sup.+ junction disposed in direct proximity to said working surface; an additional isotype junction disposed parallel and in direct proximity to the surface that is opposite the said working surface; said photocells having the shape of microminiature parallelepipeds having at least two linear dimensions commensurate with the diffusion length of minority current carriers in said base region; all said current leads interconnecting said photocells into a generator.

Other info:

Inventors: Bordina, Ninel Mineevna
Zadde, Vitaly Viktorovich (POSEL, OK, US)
Zaitseva, Aita Konstantinovna (ULIT, SA)
Landsman, Arkady Pavlovich
Strebkov, Dmitry Semenovich
Streltsova, Valentina Ivanovna
Unishkov, Vadim Alexeevich (ULIT, SA)

Application Number: 519697
Filing Date: 1974-10-31
Publication_date: 1976-04-06
Assignee:
Primary Class(es): 136/244 136/255, 257/443, 257/449, 257/E27.126, 438/67, 438/80, 438/107
Other Classes:
US Patent Ref:

3370986	Feb, 1968	Amsterdam et al.	136/89.
3422527	Jan, 1969	Gault	29/572.
3460240	Aug, 1969	Tarneja et al.	136/89.
3462311	Aug, 1969	Ross	136/89.
3513040	May, 1970	Kave et al.	136/89.
3546542	Dec, 1970	Riel et al.	136/89.
3620829	Nov, 1971	Beck	136/89.
3653971	Apr, 1972	Lidorenko et al.	136/89.
3682708	Aug, 1972	Bennett	136/89.
3690953	Sep, 1972	Wise	136/89.
3713893	Jan, 1973	Shirland	136/89.
3760240	Sep, 1973	Bergt	136/89.

Other Refs:
Primary Examiner: Tung, T.
Assistant Examiner: Weisstuch, Aaron
Attorney: Haseltine, Lake & Waters