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Primary Examiner: Larkins, William D.
Assistant Examiner:
Attorney: Edelberg; Nathan, Gibson; Robert P., Sharp; Daniel D.

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Title: Combined electron beam semiconductor modulator and junction laser

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Claims: I claim as my invention:

1. A pulse modulated laser comprising a semiconductor device having a portion thereof bombarded by an electron beam and a semiconductor laser diode grown on said semiconductor device to form a monolithic PNNP structure, said laser diode responding to current flowing within said semiconductor device during beam bombardment thereof.

2. A pulse modulated laser according to claim 1 wherein said semiconductor laser is formed of Ga.sub.x Al.sub.(1.sub.-x)As.

3. A pulse modulated laser according to claim 2 wherein said semiconductor device is formed of GaAs.

4. A pulse modulated laser according to claim 1 further including an electrical contact means connected to said laser diode.

5. A pulse modulated laser according to claim 4 wherein said laser diode contacts an inner region of said electrical contact means and said semiconductor device comprises ohmic shunting means for said laser device formed by a peripheral extension of said semiconductor device contacting a region of said electrical contact means spaced from said inner region.

6. A pulse modulated laser according to claim 1 further including a pulse modulated cathode directly modulated by applied electrical signals for producing the electron beam.

7. A pulse modulated laser according to claim 6 further including a vacuum envelope within which is disposed said cathode, said semiconductor laser diode and said semiconductor device.

8. A pulse modulated laser according to claim 1 further including a vacuum envelope within which is disposed said semiconductor laser diode and said semiconductor device.

Other info:

Inventors: Zinn, Mortimer H. (Elberon, NJ, US)

Application Number: 504002
Filing Date: 1974-09-06
Publication_date: 1976-03-02
Assignee: The United States of America as represented by the Secretary of the Army (Washington, DC)
Primary Class(es): 372/26 330/44, 330/308, 372/38.07, 372/44, 372/50, 372/74
Other Classes:
US Patent Ref:

3283160

Nov, 1966

Levitt et al.

357/19.

Other Refs: Other References: Wagner, "EBS Application to Laser Pulsing," IEEE Journal of Quantum Electics, Vol. QE -9, pp. 606-607, June 1973.
Schade et al.,"GaAs-(AlGa)As Cold-Cathode Structure," Applied Physics Letters, Vol. 20, No. 10, 15 May 1972, pp. 385-387.