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Title: Method of producing epitaxially semiconductor layers
Claims: I claim as my invention: 1. A process of producing an epitaxially deposited semiconductor layer uniformly composed of a material selected from the group consisting of silicon and germanium onto a substrate composed of a material selected from the group consisting of sapphire and a Mg-Al spinel, comprising the sequential steps of: preparing a wafer of said substrate for expitaxial deposition by cutting, polishing along specific crystal planes and freeing said wafer of damaged layers; placing the prepared wafer in an enclosed chamber on an inductively heated support means, flushing said chamber with an inert gas and heating said wafer up to at least the decomposition temperature of a thermally decomposable gaseous compound selected from the group consisting of SiH.sub.4 and GeH.sub.4 ; passing a stream of a reaction gas composed of a mixture of an inert gas and said thermally decomposable gaseous compound in an inert gas, said inert gas being selected from the group consisting of hydrogen and helium, through said chamber while maintaining said temperature of said wafer for a period of time sufficient to relatively quickly deposit a continuous seed layer of said material onto at least one surface of said wafer; and substantially simultaneously maintaining said stream of said reaction gas about said wafer and maintaining said temperature of said wafer while adding only a gaseous hydrogen halide selected from the group consisting of hydrogen chloride and hydrogen bromide to said stream of reaction gas for a period of time sufficient to relatively slowly deposit a further layer of said material onto said seed layer. 2. A process for producing an epitaxially deposited layer uniformly composed of a material selected from the group consisting of silicon and germanium onto a substrate composed of a material selected from the group consisting of sapphire and a Mg-Al spinel comprising the sequential steps of: placing said substrate in a reaction gas composed of a select mixture of an inert carrier gas and a thermally decomposable gaseous compound selected from the group consisting of SiH.sub.4 and GeH.sub.4 ; heating said substrate to at least the decomposition temperature of said thermally decomposable gaseous compound for a period of time sufficient to deposit a continuous seed layer of said material onto at least one surface of said substrate; and substantially simultaneously maintaining said select mixture of inert gas and decomposable gaseous compound about said substrate and maintaining said temperature of said substrate while adding only a gaseous hydrogen halide selected from the group consisting of HCl and HBr to said reaction gas whereby additional amounts of said material are deposited on said seed layer. 3. A process as defined in claim 2 wherein the substrate is chemically wet-etched at temperatures in the range of about 200.degree. to 400.degree. C. with phosphoric acid prior to being placed in the reaction gas atmosphere. 4. A process as defined in claim 2 wherein the reaction gas consists of a mixture of hydrogen and about 1% to 3% silane in hydrogen. 5. A process as defined in claim 2 wherein the reaction gas consists of a mixture of silane and an inert gas and the substrate is heated to a temperature below 1000.degree. C. so as to deposit silicon on said substrate. 6. A process as defined in claim 2 wherein the reaction gas consists of a mixture of helium and about 1% to 3% silane in helium. 7. A process as defined in claim 2 wherein the substrate is heated to a temperature in the range of about 850.degree. to 980.degree. C. 8. A process as defined in claim 2 wherein the reaction gas atmosphere consists of a mixture of GeH.sub.4 and a gas selected from the group consisting of hydrogen and an inert gas and the substrate is heated to a temperature of about 600.degree. to 850.degree. C. so as to deposit germanium on said substrate. 9. A process as defined in claim 2 wherein the hydrogen halide is hydrogen chloride. 10. A process as defined in claim 2 wherein the hydrogen halide is hydrogen bromide. 11. An epitaxially deposited semiconductor layer produced by a process as defined in claim 2. 12. A process as defined in claim 2 wherein the reaction gas consists of a mixture of GeH.sub.4 and in inert gas and the substrate is heated to a temperature in the range of about 600.degree. to 850.degree. C. Other info: Inventors: Druminski, Manfred (Vaterstetten, DT) Application Number: 339216 Filing Date: 1973-03-08 Publication_date: 1976-03-02 Assignee: Siemens Aktiengesellschaft (Berlin & Munich, DT) Primary Class(es): 117/90 117/93, 117/902, 117/936, 148/DIG3, 148/DIG25, 148/DIG79, 148/DIG150, 438/479 Other Classes: US Patent Ref:
Other Refs:
Hart et al. Electrical properties of epitaxial silicon films on .alpha.-alumina In Brit. J. Appl. Phys. 18: pp. 1389 to 1398, 1967. Reisman et al. The Chemical Polishing of Sapphire and MgAl Spinel In J. Electrochem. Soc.:Solid State Science. 118(10): pp. 1653-1657. Oct. 1971. | |