Title: Method of producing monocrystalline semiconductor material, particularly silicon, with adjustable dislocation density

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Claims: What is claimed is:

1. Method of producing monocrystalline silicon having a uniform dislocation density in the range of 100,000 dislocations/cm.sup.2 which comprises, in a crucible-free zone melting process, passing a molten zone through a rod situated in a recipient and with the aid of a seed crystal fused to an end of the rod converting the rod into a monocrystalline silicon rod free of dislocations, permitting the rod to cool, and then using the dislocations which exist on the end of the rod due to the zone - melting process as seeds, passing a heated zone through the dislocation-free monocrystalline silicon rod at a maximum temperature of 1370.degree.C in the direction opposite to the direction of the zone melting process at a speed of 1-2 mm/min. to impart to said dislocation-free monocrystalline silicon rod a uniform dislocation density in the range of 100,000 dislocations/cm.sup.2.
Other info:

Inventors: Keller, Wolfgang (Munich, DT)

Application Number: 462936
Filing Date: 1974-04-22
Publication_date: 1976-02-17
Assignee: Siemens Aktiengesellschaft (Munich & Berlin, DT)
Primary Class(es): 438/502 117/3, 264/346, 423/348, 438/799
Other Classes:
US Patent Ref:

3030194	Apr, 1962	Emeis	23/301.
3441385	Apr, 1969	Schmidt	23/293.

Other Refs:
Primary Examiner: Tayman, Jr., James H.
Assistant Examiner:
Attorney: Lerner; Herbert L.