Title: Method of making a compound semiconductor layer of high resistivity

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Claims: What is claimed is:

1. A method of making a semiconductor layer having a high resistivity comprising the steps of:

implanting ions into a semiconductor comprising gallium and arsenic at a first acceleration voltage at a concentration higher than the limit of solid solubility of said ions in said semiconductor, said ions being of a material which forms a deep energy level in said semiconductor;

implanting protons into said semiconductor at an acceleration voltage not less than said first acceleration voltage; and

heating said semiconductor.

2. A method of making a semiconductor layer as claimed in claim 1, wherein said material is selected from the group consisting of chromium and iron.

3. A method of making a semiconductor layer as claimed in claim 1, wherein said semiconductor is selected from the Group III compounds of GaAs, GaAs.sub.x P.sub.1.sub.-x and GaAl.sub.1.sub.-x As where x has a value greater than zero but less than one.

4. A method of making a semiconductor layer as claimed in claim 1, wherein said semiconductor is heated at temperatures ranging from 300.degree. to 700.degree.C.

Other info:

Inventors: Shinoda, Daizaburo (Tokyo, JA)

Application Number: 436802
Filing Date: 1974-01-25
Publication_date: 1976-02-03
Assignee: Nippon Electric Company Limited (Tokyo, JA)
Primary Class(es): 438/520 257/E21.34, 257/E21.542, 438/403, 438/522
Other Classes:
US Patent Ref:

3718502	Feb, 1973	Gibbons	148/1.
3824133	Jul, 1974	D'Asaro	148/1.

Other Refs:
Primary Examiner: Rosenberg, Peter D.
Assistant Examiner:
Attorney: Hopgood, Calimafde, Kalil, Blaustein and Lieberman