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Title: Semiconductor diode with voltage-dependent capacitance
Claims: What is claimed is: 1. A semiconductor diode with a voltage-dependent capacitance, comprising a semiconducting crystal having two outer layers of one type of conductivity and an intermediate layer of the opposite type of conductivity disposed between said outer layers; said intermediate layer having a resistivity substantially greater than that of said outer layers, and defining therewith two P-N junctions; one of said junctions being forward-biased and the other being reverse-biased; and electrodes connected to said outer layers for serial insertion of the diode into an electric circuit; the area of said forward-biased junction being by at least twenty times greater than the area of said reverse-biased junction; said forward-biased junction including means providing compensation for the temperature coefficient of the diode capacitance under temperature fluctuations. 2. The semiconductor diode as defined in claim 1, wherein said crystal is made of a material selected from the group consisting of silicon, germanium and gallium arsenide. 3. The semiconductor diode as defined in claim 2, wherein said P-N junctions are formed with the use of a material selected from the group consisting of boron, aluminum, indium, phosphorus, arsenic, antimony and alloys thereof, zinc being used in conjunction with the gallium aresenide. Other info: Inventors: Korovin, Stanislav Konstantinovich (ULIT, SA) Kruglov, Igor Ivanovich Preobrazhentsev, Konstantin Andreevich (ULIT, SA) Sidorov, Jury Ivanovich Fronk, Stanislav Vladislavovich Application Number: 444983 Filing Date: 1974-02-22 Publication_date: 1976-01-27 Assignee: Primary Class(es): 257/595 257/469, 257/E29.344 Other Classes: US Patent Ref:
Other Refs: Primary Examiner: James, Andrew J. Assistant Examiner: Attorney: Haseltine, Lake & Waters |
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