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Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Cushman, Darby & Cushman

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Title: Method of manufacturing a green light-emitting gallium phosphide device

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Claims: What we claim is:

1. A method of manufacturing a green light-emitting gallium phosphide device which comprises the steps of adding nitrogen from a nitrogen compound to a liquid-phase epitaxial solution maintained at a higher temperature than 1030.degree.C; precooling said solution to a temperature of 600.degree. to 1000.degree.C; bringing said precooled solution into contact with a substrate of gallium phosphide having the same conductivity type as said solution; cooling said solution for the formation of a nitrogen-containing liquid-phase epitaxial layer on said substrate; and forming a region in close proximity to said epitaxial layer with the opposite conductivity type thereto.

2. A method according to claim 1 wherein the nitrogen compound is one selected from the group consisting of ammonia, GaN, PN, P.sub.2 N.sub.3 and P.sub.3 N.sub.5.

3. A method according to claim 1 wherein nitrogen is added to the epitaxial solution maintained at a temperature of 1030.degree. to 1100.degree.C.

4. A method according to claim 1 wherein said epitaxial solution is brought into contact with the substrate at a temperature of 900.degree. to 1000.degree.C.

5. A method according to claim 1 wherein a layer having the opposite conductivity type to the epitaxial layer already formed on the substrate is superposed on the latter layer by the process of liquid-phase epitaxy.

6. A method according to claim 1 wherein a layer having the opposite conductivity type to the epitaxial layer already grown on the substrate is formed in the latter layer by the process of diffusion.

7. A method of manufacturing a green light-emitting gallium phosphide device which comprises the steps of adding nitrogen from a nitrogen compound to an n-type liquid-phase epitaxial solution maintained at a temperature of 1030.degree. to 1100.degree.C; precooling said solution to a temperature of 900.degree. to 1000.degree.C; bringing said precooled solution into contact with an n-type substrate of gallium phosphide; cooling said solution for the formation of a nitrogen-containing n-type liquid phase epitaxial layer on the substrate; and superposing a p-type liquid-phase epitaxial layer on said n-type epitaxial layer.
Other info:

Inventors: Beppu, Tatsuro (Tokyo, JA)
Iwamoto, Masami (Yokohama, JA)
Sekiwa, Tetsuo (Kawasaki, JA)

Application Number: 457649
Filing Date: 1974-04-03
Publication_date: 1976-01-27
Assignee: Tokyo Shibaura Electric Co., Ltd. (Kawasaki, JA)
Primary Class(es): 438/46 117/56, 252/62.3GA, 252/950
Other Classes:
US Patent Ref:

3462320	Aug, 1969	Lynch et al.	148/171.
3603833	Sep, 1971	Logan et al.	148/171.
3617820	Nov, 1971	Herzog	148/189.
3646406	Feb, 1972	Logan et al.	148/171.
3725749	Apr, 1973	Groves et al.	148/171.
3755017	Aug, 1973	Coughlin	148/189.

Other Refs: Other References: Stringfellow, J. Electrochem. Soc.: Solid-State Science and Technology, Vol. 19, No. 12, Dec. 1972, pp. 1780-1782.