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Title: Multi-range doping of epitaxial III-V layers from a single source

Abstract: Silicon doping of GaAs epitaxial layers grown using the AsCl3 /H2 /GaAs:Ga CVD system is accomplished using AsCl3 :SiCl4 liquid doping solutions. These solutions can be readily prepared with reproducible compositions and provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H2 flow rate and by varying the temperature of the doping solution. Doping levels may range from about 5×1015 to 5×1019 cm-3 by adjusting the mole fraction of SiCl4 in the doping solution and the H2 flow rate to change the mole fraction of PHCl. The epitaxial layers doped using this technique have excellent room temperature and liquid nitrogen mobilities for electron concentrations between 1×1016 cm-3 and 8×1018 cm-3. This doping method is particularly useful for the growth of GaAs epitaxial layers for FET devices.


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Inventors: Eu, Victor K. (Redondo Beach, CA)
Feng, Milton (Rancho Palos Verdes, CA)
Zielinski, Timothy T. (Hawthorne, CA)
Whelan, James M. (Glendale, CA)

Application Number: 06/276104
Filing Date: 1981-06-22
Publication_date: 1983-10-04
Assignee: HUGHES AIRCRAFT CO (US)

Primary Class(es): 117/84 252/951, 117/928, 438/925, 118/900, 257/E21.110, 252/62
Other Classes: H01L21/205; H01L21/02; H01L21/205; H01L21/223
US Patent Ref:
3146137August, 1964Williams148/175Smooth epitaxial compound films having a uniform thickness by vapor depositing on the (100) crystall
3218205November, 1965Ruehrwein148/175Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-
3471324October, 1969Wilson et al.148/175EPITAXIAL GALLIUM ARSENIDE
3716404February, 1973Hirao et al.148/1.5PROCESS FOR DOPING WITH IMPURITIES A GAS-PHASE-GROWN LAYER OF III-V COMPOUND SEMICONDUCTOR

Other Refs: Other References: Shaw et al., "Gallium Arsenide Epitaxial Technology", 1966 Symp. on GaAs, Paper No. 2, pp. 10-15.
DiLorenzo, J. V., "Vapor Growth--GaAs--Epitaxial Layers", J. Crystal Growth, vol. 17, 1972, pp. 189-206.
Frieser, R. G., "Low-Temperature Silicon Epitaxy", J. Electrochem. Soc., vol. 115, No. 4, Apr. 1968, pp. 401-405.

Primary Examiner: Saba W. G.
Assistant Examiner:
Attorney: Collins, David W.
Bethurum W. J.
Karambelas A. W.
Claims: