Title: Method of manufacturing a magnetic bubble memory element

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Abstract: A magnetic bubble memory element comprising a magnetic bubble memory unit and a separating region portion, which is prepared by the steps of forming a plurality of island shaped magnetic bubble memory units with separating regions intervening therebetween on a single crystalline substrate and performing the cutting process along the separating regions. In a preferably prepared memory element, the magnetic bubble memory unit and the separating region portion own in common a single crystalline magnetic thin layer which is formed on the substrate and the memory unit further comprises a hard bubble suppression film deposited on the magnetic thin layer, a conductor pattern layer and a magnetic film pattern layer both of which are deposited in that order on the suppression film so as to be insulated therefrom as well as insulated from each other. In another preferably prepared memory element, the memory unit and the separating region portion own in common the single crystalline magnetic thin layer and the hard bubble suppression film, and the memory unit further comprises the conductor pattern layer and the magnetic film pattern layer both of which are deposited in that order on the suppression film so as to be insulated therefrom as well as insulated from each other.


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