Title: Method for manufacturing semiconductor elements from amorphous silicon

Abstract: A method and device for manufacturing semiconductor elements of amorphous licon which convert light into electrical energy comprising, supplying a silicon compound to a vessel, passing an electric field through the vessel sufficient to produce a glow discharge having free electrons in the vessel to precipitate amorphous silicon from the silicon compound onto a substrate in the vessel, and providing a magnetic field in the vessel which is directed substantially transversely to the electric field and is of a magnitude sufficient to conduct the free electrons along closed paths over the surface of the substrate.

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Inventors: Winterling, Gerhard (Ottobrunn, DE)
Koniger, Max (Pullach, DE)

Application Number: 06/195751
Filing Date: 1980-10-10
Publication_date: 1983-01-18
Assignee: Messerschmitt, Boelkow Blohm (DE)

Primary Class(es): 438/96 136/258, 118/623, 427/574, 204/DIG.005, 438/485, 427/57
Other Classes: C23C16/24; C23C16/509; H01L31/20; C23C16/22; C23C16/50; H01L31/18; B05D3/06
US Patent Ref:

3485666	December, 1969	Sterling et al.	427/39	METHOD OF FORMING A SILICON NITRIDE COATING
4022947	May, 1977	Grubb et al.	427/38	Transparent panel having high reflectivity for solar radiation and a method for preparing same
4196438	April, 1980	Carlson	427/39	Article and device having an amorphous silicon containing a halogen and method of fabrication

Other Refs: GB1544612

April, 1979

118/623

Primary Examiner: Page, Thurman K.
Assistant Examiner:
Attorney: Mcglew, And Tuttle

Claims:

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