|
|

|
|
Title:
RF Heating coil construction for stack of susceptors
Abstract:
Arrangement for RF heating a stack of disc-like susceptor elements lying in parallel planes in which a coil surrounding the elements creates the RF field. The coil comprises a plurality of turns which are saddle-shaped and oriented so that a turn generates a field which inductively heats at least two of the susceptor elements and so that most elements are heated by fields created by at least two turns.
Do you think this is a good invention? Vote now:
Votes so far: For:(0) Against:(0) Other info:
Inventors:
Miller, Edward A. (Morrisville, PA)
Application Number:
06/165740
Filing Date: 1980-07-03 Publication_date: 1982-07-13 Assignee:
RCA CORP
Primary Class(es):
219/634
219/674, 118/725, 118/730, 219/652, 118/620, 427/543, Other Classes:
H05B6/02; C23C13/08; H05B6/40
US Patent Ref:
| 2469640 | May, 1949 | Gillespie | 219/10.79 | Method of and apparatus for forming stockings and the like | | 3031555 | April, 1962 | Ross et al. | 219/10.79 | Induction heating | | 3212858 | October, 1965 | Smith et al. | 219/10.49 | Apparatus for producing crystalline semiconductor material | | 3539759 | November, 1970 | Spiro et al. | 219/10.49R | SUSCEPTOR STRUCTURE IN SILICON EPITAXY | | 3549847 | December, 1970 | Clark et al. | 219/10.49R | GRAPHITE SUSCEPTOR | | 3699298 | October, 1972 | Briody | 219/10.49R | METHODS AND APPARATUS FOR HEATING AND/OR COATING ARTICLES | | 3845738 | November, 1974 | Berkman et al. | 219/10.49 | VAPOR DEPOSITION APPARATUS WITH PYROLYTIC GRAPHITE HEAT SHIELD | | 3980854 | September, 1976 | Berkman et al. | 219/10.49R | Graphite susceptor structure for inductively heating semiconductor wafers | | 4062318 | December, 1977 | Ban et al. | 118/725 | Apparatus for chemical vapor deposition | | 4112285 | September, 1978 | Pan et al. | 219/10.79 | Induction heating using parallel electric/magnetic fields |
Other Refs:
DE2157135| May, 1973 | 118/728 | | | DE2201142July, 1973 | 118/728 | | |
Other References:
Journal of Crystal Growth, "Novel Reactor for High Volume Low-Cost Silicon Epitaxy", V. S. Ban, vol. 45 (1978), pp. 97-107.
Primary Examiner:
Reynolds B. A.
Assistant Examiner:
Leung, Philip H.
Attorney:
Cohen, Samuel
Squire, William
|
|

|