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Title: IGFET Bootstrap circuit

Abstract: An improved IGFET bootstrap driver circuit capable of driving a load impedance to substantially full VDD power supply voltage and holding the load at that voltage for an indefinite period of time. The circuit includes a load transistor, a feedback capacitor connected between the source and gate electrodes of the load transistor, a fix valued resistor connected between the gate electrode of the load transistor and an on-chip bias voltage generating circuit for providing a bias voltage greater than VDD+VT. The resistor and the bias voltage generating circuit provide sufficient current to replenish the charge lost from the feedback capacitor through junction leakage currents in the driver circuit. The resistor is of a sufficiently high value such that the current drain from the generating circuit is insignificantly small in comparison to the current drain from the VDD power supply. The improved circuit also permits the load transistor to be switched "on" or "off" by an externally applied signal.


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Inventors: Rosenzweig, Walter (Allentown, PA)

Application Number: 06/044397
Filing Date: 1979-05-31
Publication_date: 1981-08-18
Assignee: BELL TELEPHONE LABOR INC

Primary Class(es): 326/88 326/52
Other Classes: G05F3/20; H03K19/017; H03K19/0185; G05F3/08; H03K19/01; H03K19/003; H03K19/094; H03K19/20
US Patent Ref:
3506851April, 1970Polkinghorn et al.307/251FIELD EFFECT TRANSISTOR DRIVER USING CAPACITOR FEEDBACK
3649843March, 1972Redwine et al.307/251MOS BIPOLAR PUSH-PULL OUTPUT BUFFER
3774055November, 1973Bapat307/DIG.4CLOCKED BOOTSTRAP INVERTER CIRCUIT
3805095April, 1974Lee et al.307/DIG.4FET THRESHOLD COMPENSATING BIAS CIRCUIT
3808468April, 1974Ludlow et al.307/304BOOTSTRAP FET DRIVEN WITH ON-CHIP POWER SUPPLY
3906255September, 1975Mensch, Jr.307/205MOS current limiting output circuit
3986044October, 1976Madland et al.307/205Clocked IGFET voltage level sustaining circuit
4071783January, 1978Knepper307/205Enhancement/depletion mode field effect transistor driver
4110776August, 1978Rao et al.357/23Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer

Other Refs:
Primary Examiner: Anagnos, Larry N.
Assistant Examiner:
Attorney: Torsiglieri, Arthur J.
Claims:
I cl