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Primary Examiner: Smith, John D.
Assistant Examiner:
Attorney: Dworetsky; Samuel H.

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Title: Controlling the properties of native films using selective growth chemistry

Abstract: An improved technique for growing native films on compound semiconductors is disclosed. In this technique, additional preferential chemistry is used in conjunction with prior art growth processes to eliminate what would otherwise be unreacted constituents in the native film. Films grown using this technique display improved electrical properties.

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Inventors: Chang, Robert P. H. (Warren, NJ, US)

Application Number: 012192
Filing Date: 1979-02-14
Publication_date: 1981-01-20
Assignee: Bell Telephone Laboratories, Incorporated (Murray Hill, NJ)
Primary Class(es): 438/695 148/241, 204/164, 257/E21.283, 257/E21.326, 427/563, 427/571, 427/596, 438/718, 438/767
Other Classes:
US Patent Ref:

3287243	Nov, 1966	Ligenza	204/192.
3297500	Jan, 1967	Drake et al.	148/174.
3692571	Sep, 1972	Colton et al.	427/93.
3890169	Jun, 1975	Schwartz et al.	148/1.
3907616	Sep, 1975	Wiemer	204/164.
3914465	Oct, 1975	Dyment et al.	427/82.
4062747	Dec, 1977	Chang et al.	204/164.
4144634	Mar, 1979	Chang et al.	204/164.
4170666	Oct, 1979	Pancholy et al.	427/82.
4172906	Oct, 1979	Pancholy	427/82.
4183780	Jan, 1980	McKenna et al.	427/38.

Other Refs: Other References: Bondur et al., "Ion Implanted Emitters Defined by Plasma Etching," IBM TDB, 18, No. 8, 1-1976.
Ma et al., "Selective Oxidation of Silicon in Oxygen Plasma," IBM TDB, 19, No. 9, 2-1977.
Stirn et al., "Technology of GaAs Metal-Oxide-Semiconductor Solar Cells," IEEE Transactions on Electron Devices, vol. EP-24, No. 4, 4-1977.
Chang, "Some Properties of Plasma-Grown GaAs Oxides," Thin Solid Films, 56, pp.v89-106, 1-1979.