Title: Method of fabricating an SOS island edge passivation structure

Abstract: A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicon nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown.

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Inventors: Peel, John L. (Sandy, UT, US)

Application Number: 085148
Filing Date: 1979-10-15
Publication_date: 1980-12-30
Assignee: Rockwell International Corporation (El Segundo, CA)
Primary Class(es): 438/165 148/DIG150, 257/354, 257/640, 257/E27.111, 257/E29.133, 257/E29.137, 257/E29.151, 257/E29.165, 257/E29.287, 438/911
Other Classes:
US Patent Ref:

3890632	Jun, 1975	Ham et al.	357/49.
3974515	Aug, 1976	Ipri et al.	357/23.
4002501	Jan, 1977	Tamura	148/175.
4015279	Mar, 1977	Ham	357/4.
4054895	Oct, 1977	Ham	357/23.
4057824	Nov, 1977	Woods	357/56.
4072974	Feb, 1978	Ipri	357/49.
4097314	Jun, 1978	Schlesier et al.	148/187.
4174217	Nov, 1979	Flatley	148/187.

Other Refs:
Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Saba, W. G.
Attorney: Hamann; H. Fredrick, McGlynn; D. R., Caldwell; W. G.