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Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Roy, Upendra
Attorney: Edelberg; Nathan, Gibson; Robert P., Dunn; Aubrey J.

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Title: Method of making photodetectors using ion implantation and laser annealing

Abstract: A semiconductor substrate is bombarded by ions of sufficient energy to perate the surface of the substrate to some average predetermined depth. The substrate is then scanned by a laser beam having a small diameter compared to the substrate thickness and having sufficient energy to heat the substrate to the predetermined depth. The heat allows surface damage on the substrate from the ion bombardment to heal, and allows the ions and substrate to form a compound to the predetermined depth with controllable redistribution. This compound is the photodetector of the method. The ions may be implanted through a mask to produce isolated detector regions, or the entire substrate surface may be bombarded, and those regions not desired for detector regions may be removed by a laser beam of sufficient energy to cause evaporation of a layer of the substrate. Exemplary substrate and ions are respectively cadmium telluride and mercury.

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Inventors: King, Gerard J. (Alexandria, VA, US)
Dunn, Aubrey J. (Springfield, VA, US)

Application Number: 062593
Filing Date: 1979-07-31
Publication_date: 1980-12-30
Assignee: The United States of America as represented by the Secretary of the Army (Washington, DC)
Primary Class(es): 257/49 117/53, 117/904, 148/DIG3, 148/DIG6, 148/DIG84, 148/DIG93, 257/431, 257/442, 257/466, 257/E21.347, 257/E21.475, 438/94
Other Classes:
US Patent Ref:

4081653	Mar, 1978	Koo et al.	219/121.
4147563	Apr, 1979	Narayan et al.	148/1.
4154625	May, 1979	Golovchenko et al.	148/1.
4155779	May, 1979	Auston et al.	148/1.

Other Refs: 2208271

Aug, 1973	DE

Other References: Marine et al., Appl. Phys. Letts. 23 (1973) 450.
Fiorito et al., Appl. Phys. Letts. 23 (1973) 448.
Campisano et al., Solid St. Electronics, 21 (1978) 485.
Kachurin et al., Sov. Phys. Semicond. 9 (1976) 946.
Fan et al., Appl. Phys. Letts. 34 (Jun. 1979) 780.
Donnelly et al., Appl. Phys. Letts. 20 (1972) 279.
Martin, Nuclear Inst. & Methods, 72 (1969) 223.