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Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Lachman; Mary E., MacAllister; W. H.

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Title: Process for growing indium phosphide of controlled purity

Abstract: The specification discloses a process for growing crystals of a Group III-V material having controlled and high purity. The crystal is grown in the presence of hydrogen containing a predetermined amount of water vapor and the water vapor suppresses the concentration of silicon impurities from the reaction chamber, the associated tubing, and/or the starting materials, which are incorporated in the grown crystal. The crystal growth process may be either an epitaxial process or a bulk process. In one embodiment of the invention, the material grown is indium phosphide. In another embodiment of the invention, the process described above is used to grow a series of epitaxial layers of a Group III-V material with each layer having different predetermined impurity concentrations, to form a Gunn diode device.

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Inventors: Kamath, G. Sanjiv (Malibu, CA, US)
Holmes, Douglas E. (Thousand Oaks, CA, US)

Application Number: 056495
Filing Date: 1979-07-11
Publication_date: 1980-12-09
Assignee: Hughes Aircraft Company (Culver City, CA)
Primary Class(es): 117/21 117/56, 117/67, 117/906, 117/953, 438/925
Other Classes:
US Patent Ref:

3397094	Aug, 1968	Webb	148/174.
3560275	Feb, 1971	Kressel et al.	148/171.
3623905	Nov, 1971	Akai et al.	148/171.
3762943	Oct, 1973	Winstel et al.	148/171.
3836408	Sep, 1974	Kasano	148/175.
3883313	May, 1975	Cullen et al.	148/171.
3994755	Nov, 1976	Kamath et al.	148/172.
4004953	Jan, 1977	Otsubo et al.	148/171.
4008485	Feb, 1977	Miyoshi et al.	148/171.
4026735	May, 1977	Kamath et al.	148/171.
4035205	Jul, 1977	Lebailly et al.	148/171.
4155784	May, 1979	Mills et al.	148/175.

Other Refs: Other References: Weiner, M. E., J. Electrochem. Soc. vol. 119, No. 4, Apr. 1972, pp. 496-504.