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Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Roy, Upendra
Attorney: Krauss; Geoffrey H., Davis; James C., Snyder; Marvin

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Title: Method for improving writing of information in memory targets

Abstract: The amount of charge written into the insulator layer of an electron-beam-addressed metal-insulator-semiconductor target is increased by increasing the number of defects in the insulator to provide additional charge trapping and storage sites. Ion implantation techniques for accomplishing the increase of charge trapping sites are disclosed.


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Inventors: Kirkpatrick, Conilee G. (Schenectady, NY, US)
Possin, George E. (Schenectady, NY, US)
Stout, Virgil L. (Schenectady, NY, US)

Application Number: 944385
Filing Date: 1978-09-21
Publication_date: 1980-04-08
Assignee: General Electric Company (Schenectady, NY)
Primary Class(es): 438/393 148/DIG24, 148/DIG93, 148/DIG128, 257/E21.194, 257/E21.248, 438/528, 438/910
Other Classes:
US Patent Ref:
3761895Sep, 1973Ellis et al.340/173.
3897274Jul, 1975Stehlin et al.148/1.
3929512Dec, 1975Nicholas et al.148/1.
3931632Jan, 1976Uchida et al.357/23.
3945031Mar, 1976Kahng et al.357/23.
3952325Apr, 1976Beale et al.357/23.
4021787May, 1977Stein et al.340/173.
4027320May, 1977Jacobs et al.357/23.
4035820Jul, 1977Matzen357/23.
4047974Sep, 1977Harari148/1.
4081292Mar, 1978Aoki et al.148/1.

Other Refs: Other References: Learn et al., ". . . Ion-Impl. . . . in . . . Si/SiO.sub.2 System," Jour. Appl. Phys., 48, (1977), 308.
Young et al., ". . . Electron Trapping . . . SiO.sub.2 . . . Al," Jour. Electron Materials, 6, (1977), 569.