Title: Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors

Abstract: A nonalloyed ohmic contact (110-112, 120-122) to an n-type Group III(a)-V(a) compound semiconductor body (102-104) is formed by epitaxially growing a Group III(a)-V(a) n.sup.++ -layer (106-108, 106'-108') doped to at least 10.sup.19 cm.sup.-3 between the semiconductor body and a metal contact layer (110-112). The metal layer forms an ohmic contact without requiring heating above the eutectic temperature. In order to avoid contamination of the metal-semiconductor interface, a metal contact layer (120-122) may be deposited in situ after MBE growth of the n.sup.++ -layer. This technique results in both a metal-semiconductor interface with smoother morphology and also an ohmic contact without heating above the eutectic temperature. These procedures are specifically described with reference to the fabrication of GaAs FETs.

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Inventors: Cho, Alfred Y. (Summit, NJ, US)
Di Lorenzo, James V. (Millington, NJ, US)
Niehaus, William C. (Murray Hill, NJ, US)

Application Number: 919624
Filing Date: 1978-06-27
Publication_date: 1980-01-29
Assignee: Bell Telephone Laboratories, Incorporated (Murray Hill, NJ)
Primary Class(es): 257/280 148/DIG18, 148/DIG20, 148/DIG88, 257/485, 257/743, 257/763, 257/E21.097, 257/E21.172, 257/E29.144, 257/E29.317, 438/571, 438/606
Other Classes:
US Patent Ref:

3242391	Mar, 1966	Gorman	357/67.
3490140	Jan, 1970	Knight et al.	357/67.
3684930	Jan, 1974	Collins et al.	357/67.
3711745	Jan, 1973	Moroney	357/67.
3855613	Dec, 1974	Napoli et al.	357/22.
3898353	Aug, 1975	Napoli et al.	357/67.
3914785	Oct, 1975	Ketchow	357/67.
4011583	Mar, 1977	Levinstein	357/71.

Other Refs:
Primary Examiner: James, Andrew J.
Assistant Examiner:
Attorney: Urbano; Michael J.