Title: Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus

Abstract: An avalanche diode comprising a semiconducting heterojunction (Ga.sub.x In.sub.1-x As/InP) intended to oscillate as an "IMPATT" diode. It comprises a substrate of n.sup.+ doped monocrystalline InP supporting a series of three layers which are formed by epitaxy and of which the monocrystalline latices match one another namely an InP layer with n-type doping and two layers of Ga.sub.x In.sub.1-x As (best mode: Ga.sub.0.47 In.sub.0.53 As) with n-type and p.sup.+ -type doping respectively, these two layers being of minimal thickness. When a backward bias is applied to the p.sup.+ n-junction, the avalanche phenomenon takes place in the thin n-type layer of ternary alloy.

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Inventors: Delagebeaudeuf, Daniel (Paris, FR)
Pearsall, Thomas (Paris, FR)

Application Number: 929500
Filing Date: 1978-07-31
Publication_date: 1980-01-29
Assignee: Thomson-CSF (Paris, FR)
Primary Class(es): 257/199 148/33.4, 257/201, 257/604, 257/E29.091, 257/E29.334, 438/380
Other Classes:
US Patent Ref:

3982261	Sep, 1976	Antypas	357/16.
4017332	Apr, 1977	James	136/89.
4075651	Feb, 1978	James	357/22.
4083062	Apr, 1978	Ohuchi	357/13.

Other Refs:
Primary Examiner: Edlow, Martin H.
Assistant Examiner:
Attorney: Oblon, Fisher, Spivak, McClelland & Maier