Title: X-ray lithography

Abstract: X-ray lithographic systems as heretofore constructed include a low-attenuation chamber for propagating x-rays from a source toward a mask member that is positioned in close proximity to a resist-coated wafer. Both the mask and the wafer are included in the chamber which typically is either filled with helium or evacuated to a pressure less than about 10.sup.-2 Torr. In accordance with this invention, an x-ray lithographic system is constructed to enable establishment in the wafer-to-mask region of a controlled atmosphere that is separate and distinct from that maintained in the low-attenuation chamber. In this way, an improved lithographic system with advantageous throughput and other characteristics is realized.

Do you think this is a good invention? Vote now:

Votes so far: For:(0) Against:(0)
Other info:

Inventors: Dean, Robert E. (High Bridge, NJ, US)
Maydan, Dan (Short Hills, NJ, US)
Moran, Joseph M. (Berkeley Heights, NJ, US)
Taylor, Gary N. (Fanwood, NJ, US)

Application Number: 857380
Filing Date: 1977-12-05
Publication_date: 1980-01-22
Assignee: Bell Telephone Laboratories, Incorporated (Murray Hill, NJ)
Primary Class(es): 378/34
Other Classes:
US Patent Ref:

3743842	Jul, 1973	Smith et al.	250/492.
4066905	Jan, 1978	Dassler et al.	250/441.
4119855	Oct, 1978	Bernacki	250/492.

Other Refs:
Primary Examiner: Church, Craig E.
Assistant Examiner: O'Hare, Thomas P.
Attorney: Canepa; Lucian C.