Title: Droplet migration doping using carrier droplets

Abstract: Carrier droplets are employed in moving melts of metal-rich semiconductor material through a solid body of semiconductor material by thermal gradient zone melting. One element of the droplet is selected for its ability to penetrate and migrate through the semiconductor material at a reasonable rate. One or more second elements are included in the droplet to impart the desired level of resistivity, conductivity type and/or level of lifetime to the recrystallized semiconductor material or to the material of the body.

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Inventors: Anthony, Thomas R. (Schenectady, NY, US)
Cline, Harvey E. (Schenectady, NY, US)

Application Number: 944280
Filing Date: 1978-09-21
Publication_date: 1980-01-22
Assignee: General Electric Company (Schenectady, NY)
Primary Class(es): 117/40 117/53, 257/E21.154, 438/538, 438/540, 438/557
Other Classes:
US Patent Ref:

2813048	Nov, 1957	Pfann	148/1.
3988762	Oct, 1976	Cline et al.	357/48.
3988766	Oct, 1976	Anthony et al.	357/60.
3988767	Oct, 1976	Anthony et al.	357/60.
3988768	Oct, 1976	Anthony et al.	357/60.
3998662	Dec, 1976	Anthony et al.	148/1.
4001047	Jan, 1977	Boah	148/171.
4010534	Mar, 1977	Anthony et al.	29/572.
4032364	Jun, 1977	Anthony et al.	148/187.

Other Refs:
Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Winegar; Donald M., Cohen; Joseph T., MaLossi; Leo I.