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Primary Examiner: Rutledge, L. Dewayne
Assistant Examiner: Saba, W. G.
Attorney: Rusz; Joseph E., Miller; Henry S.

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Title: Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation

Abstract: A method of spatially tailoring the surface barrier of MOS devices by means of a scanning electron microscope using ionizing radiation at the silicon dioxide-silicon interface to control the surface charge distribution. The MOS is subsequently annealed at about 300.degree. C. for several hours to stabilize the surface potential.

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Inventors: Millea, Michael F. (Manhattan Beach, CA, US)

Application Number: 913186
Filing Date: 1978-06-06
Publication_date: 1980-01-22
Assignee: The United States of America as represented by the Secretary of the Air (Washington, DC)
Primary Class(es): 438/798 148/DIG46, 148/DIG93, 250/492.2, 257/218, 257/651, 257/E21.194, 257/E21.324, 257/E21.328
Other Classes:
US Patent Ref:

3507709	Apr, 1970	Bower	357/52.
3691376	Sep, 1972	Bauerlein et al.	357/52.
3755092	Aug, 1973	Antula	204/35.
3796932	Mar, 1974	Amelio et al.	357/24.
3829961	Aug, 1974	Bauerlein et al.	357/29.
3886530	May, 1975	Huber et al.	357/23.
3888701	Jun, 1975	Tarneja et al.	148/1.
4109029	Aug, 1978	Ozdemir et al.	250/492.

Other Refs: Other References: Tokuyama et al., "Si-SiO.sub.2 Interface States . . . Ion Species", Textbook, Ion Implantation in Semiconductors . . ., 1973, pp. 159-168.
Donovan et al., "Radiation Hardening . . . Displacement Damage", J. Applied Physics, vol. 43, No. 6, Jun. 1972, pp. 2897-2899.
Broers et al., "Microcircuits by Electron Beam", Scientific American, Nov. 1972, pp. 34-44.
Bhatia et al., "Irradiation Technique . . . Charge-Coupled Storage Cell", I.B.M. Tech. Discl. Bull., vol. 15, No. 3, Aug. 1972, pp. 723-724.