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Primary Examiner: Smith, John D.
Assistant Examiner:
Attorney: Hill, Van Santen, Steadman, Chiara & Simpson

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Title: Method for manufacturing an oxide of semiconductor

Abstract: A method of manufacturing an oxide layer of semiconductor composition is disclosed. On the surface portion of semiconductor substrate, an oxide layer is formed by oxidizing it in heated water containing oxygen gas, such, for example, as ozone. One preferred method is to bubble the ozone through hot water which contains near saturated steam at the temperature of the water.


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Inventors: Inoue, Makoto (Yokohama, JP)

Application Number: 747256
Filing Date: 1976-12-02
Publication_date: 1979-11-27
Assignee: Sony Corporation (Tokyo, JP)
Primary Class(es): 438/767 148/284, 257/E21.283, 423/593.1, 423/617, 423/624, 427/435, 427/443.2, 438/903
Other Classes:
US Patent Ref:
2974075Mar, 1961Miller148/6.
3290180Dec, 1966Baird et al.148/6.
3372067Mar, 1968Schafer148/6.
3380852Apr, 1968Goetzberger148/6.
3413160Nov, 1968Teumac148/6.
3447958Jun, 1969Okutsu et al.148/6.
3462323Aug, 1969Groves427/82.
3525650Aug, 1970Pammer et al.148/6.
3798139Mar, 1974Schwartz204/56.
3914465Oct, 1975Dyment et al.427/82.
3922774Dec, 1975Lindmayer et al.148/6.

Other Refs: 47-13871
Jul, 1972JP
Other References: Rubenstein, "The Oxidation of GaP and GaAs", Journal of Electrochemical Society, Jun. 1966, pp. 540-542.
Deal, "The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam", Journal of Electrochemical Society, Jun. 1963, pp. 527-533.
Phillips et al., "Gallium-Arsenide-Phosphide MIS Capacitor Fabrication and Radiation Studies", Univ. of New Mexico, Eng. Research, 5-1972.
Bremmer et al., C.A. 69, 92535d (1968).
Mironov et al., C.A. 74, 147362f (1971).
Sommer, C.A. 75, 115,482z (1971).