Title: Complementary metal-ferroelectric semiconductor transistor structure and a matrix of such transistor structure for performing a comparison

Abstract: A complementary metal-ferroelectric-semiconductor transistor structure (MFST) in which an n-channel MFST is electrically coupled to a p-channel MFST in complementary fashion with the source of the n-channel MFST connected to the drain of the p-channel MFST and the drain of the n-channel MFST connected to the source of the p-channel MFST. The memory element is controlled in response to a polarizing voltage, and erasing voltage, a reference signal, and input signals such that the input signals are compared with respect to the reference signal. A matrix of memory elements arranged in rows and columns is also described with each of the memory elements comprised of a complementary MFST structure.

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Inventors: Wu, Shu-Yau (Pittsburgh, PA, US)

Application Number: 834941
Filing Date: 1977-09-20
Publication_date: 1979-07-10
Assignee: Westinghouse Electric Corp. (Pittsburgh, PA)
Primary Class(es): 365/145 257/295, 257/E27.104, 327/1, 327/77, 327/214, 340/14.6, 365/181, 365/184
Other Classes:
US Patent Ref:

3832700	Aug, 1974	Wu et al.	365/145.
4053798	Oct, 1977	Koike et al.	365/181.
4063225	Dec, 1977	Stewart	365/188.

Other Refs:
Primary Examiner: Hecker, Stuart N.
Assistant Examiner:
Attorney: Patterson; H. W.