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Title:
Thyristor with gate and emitter shunts distributed over the cathode surface
Abstract:
A thyristor having a gate and emitter shunts distributed over a cathode surface, wherein those emitter shunts provided in the vicinity of the gate are separated by shorter distances than those emitter shunts which are present on the remainder of the cathode surface. The distances are in each case determined by measuring the distance from the center of one emitter short-circuit to the center of an adjacent emitter short-circuit.
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Inventors:
Jaecklin, Andre (Ennetbaden, CH)
Application Number:
838061
Filing Date: 1977-09-30 Publication_date: 1979-04-17 Assignee:
BBC Brown, Boveri & Company, Limited (Baden, CH)
Primary Class(es):
257/163
257/175, 257/E29.038
Other Classes:
US Patent Ref:
Other Refs:
1220894| Jan, 1971 | GB | | 1239067Jul, 1971 | GB | | 1272154Apr, 1972 | GB | | 1434905May, 1976 | GB | | | | | | | |
Other References:
A. Jaecklin, "The First Dynamic Phase at Turn-On of a Thyristor," IEEE Trans. on Elec. Dev., vol. ed-23 #8, Aug. 1976, pp. 940-944. |