Home

Primary Examiner: Heyman, John S.
Assistant Examiner:
Attorney: Christoffersen; H., Rodrick; Robert, Lazar; Joseph D.

Next ten patents ordered by date:

Electro-magnetic devices
Elastic mounting of a core in an electric machine stator
Crimped seal piezoelectric resonator package
Rotating anode X-ray tube
Source of ions of high mass, especially ions of uranium oxide UO.sub.2
Incandescent lamp
Composite substrate for rotating x-ray anode tube
Modular guided beam flat display device
Fluorescent lamp having integral mercury-vapor pressure control means
Electron emitter with focussing arrangement

Translate:
En
De
Es
Fr
It
Pt
Ja
Ko
Zh

Title: Fet-teld combination with capacitively coupled output electrode means

Abstract: A field effect transistor (FET) is connected in series to a transferred electron logic device (TELD), the TELD being a non-linear load resistor for the FET. The current thresholding property of the TELD and the saturation characteristics of the FET are utilized to produce an output pulsed signal of substantial voltage gain with fast rise time and short pulse width. An output electrode is capacitively coupled to the TELD to provide an output pulsed signal of alternating polarity for direct interconnection of devices in cascaded circuits.

Do you think this is a good invention? Vote now:

Votes so far: For:(0) Against:(0)
Other info:

Inventors: Upadhyayula, Lakshminarasimha C. (East Windsor, NJ, US)

Application Number: 816692
Filing Date: 1977-07-18
Publication_date: 1979-03-20
Assignee: RCA Corporation (New York, NY)
Primary Class(es): 327/581 257/E27.003
Other Classes:
US Patent Ref:

3115584	Dec, 1963	Yao	307/214.
3848141	Nov, 1974	Sterzer	307/299.
3980896	Sep, 1976	Kato	307/214.
4000415	Dec, 1976	Curtice	307/299.

Other Refs: Other References: IEEE Journal of Solid State Electronics, vol. SC-7, No. 3, Jun. 1972, pp. 231-237, "A Most Inverter with Improved Switching Speed", by J. Kooman & Akker.
IEEE Journal of Solid State Circuits - "Gunn Device Gigabit Rate Digital Microcircuits" by K. Mause, A. Schlachetzki, E. Hesse and H. Salow; pp. 2-11, Feb. 1975.
Electronic Letters, "Integration of GaAs MESFETS and Gunn Elements in a 4-Bit Gate Device" by N. Hashizume and S. Kataoka; pp. 370-372, Jul. 1976, vol. 12, No. 15.