Title: Method of producing a semiconductor component

Abstract: Semiconductor components, as for LSI-circuits are produced in such a manner that epitaxial layers as well as buried layers are dispensed with while an increased manufacturing yield and an increased structural packing density is achieved via an oxide insulating technique. The process involves applying and structuring a first insulating layer, such as composed of Si.sub.3 N.sub.4, onto a semiconductor substrate having a first zone of one conductivity type therein, etching insulating grooves into the substrate areas not covered with the first insulating layer and filling such grooves with a second insulating layer, such as composed of SiO.sub.2, which is thicker than the first insulating layer, and then emplacing the various semiconductor structures at select surface areas between spaced-apart areas of the second insulating layer so as to complete the semiconductor structure.

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Inventors: Schwabe, Ulrich (Munich, DE, US)
Rathbone, Ronald (Taufkirchen, DE, US)

Application Number: 921711
Filing Date: 1978-07-03
Publication_date: 1979-03-13
Assignee: Siemens Aktiengesellschaft (Berlin & Munich, DE)
Primary Class(es): 438/362 257/546, 257/E21.147, 257/E21.231, 257/E21.258, 257/E21.538, 257/E21.559, 438/372, 438/376
Other Classes:
US Patent Ref:

3909318	Sep, 1975	LeCan et al.	148/175.
3933540	Jan, 1976	Kondo et al.	148/175.
3962717	Jun, 1976	O'Brien	148/175.
3963524	Jun, 1976	Graul et al.	148/1.
3977925	Aug, 1975	Schwabe	156/17.
4008107	Feb, 1977	Hayasaka et al.	148/175.
4014714	Mar, 1977	Murrmann et al.	148/1.

Other Refs:
Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Hill, Gross, Simpson, Van Santen, Steadman, Chiara & Simpson