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Primary Examiner: Miller, Jr., Stanley D.
Assistant Examiner: Davie, James W.
Attorney: Christoffersen; H., Cohen; D. S., Asman; Sanford J.

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Title: Drain extensions for closed COS/MOS logic devices

Abstract: A drain extension which is employed with complementary symmetry metal-oxide semiconductor (COS/MOS) devices which are constructed with a closed geometry gate structure. This drain extension of closed geometry gate structures includes lightly doped regions which surround contacts and heavily doped regions in the areas between concentric gates where there are no contacts.

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Inventors: Dingwall, Andrew G. F. (Bridgewater, NJ, US)

Application Number: 892906
Filing Date: 1978-04-03
Publication_date: 1979-02-27
Assignee: RCA Corp. (New York, NY)
Primary Class(es): 257/408 257/372, 257/387, 257/E29.012, 257/E29.026, 257/E29.04, 257/E29.268
Other Classes:
US Patent Ref:

3345216	Oct, 1967	Rogers	357/23.
3434021	Mar, 1969	Hofstein	357/23.

Other Refs: Other References: Krick et al., "Integratable, Symmetrical, High-Voltage MOSFET Structure," IBM Technical Disclosure Bulletin, vol. No. 6, Nov. 1972, pp. 1884-1885.