Title: Method of fabricating semiconductor devices with a low thermal resistance and devices obtained by the method

Abstract: A method of fabricating highly miniaturized semiconductor devices which must be electrically but not thermally insulated from ground, by replacing the conventional disk of beryllium oxide with a portion of the substrate itself so as to decrease the thermal resistance. To this end one starts with a disk of "PIN"-structure silicon. On one of its faces (P or N as the case may be) one deposits by epitaxy, or forms by successive diffusions, the active layers of the device and the surdoped zones. The "PIN" diode may be reverse biased if it is desired to create a capacity between active layers and metallic support serving as heat sink. Diodes and transistors in high-frequency microelectronics obtained by the method are also described.

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Inventors: Henry, Raymond (Paris, FR)
Morel, Philippe (Paris, FR)

Application Number: 766666
Filing Date: 1977-02-08
Publication_date: 1979-02-27
Assignee: Thomson-CSF (Paris, FR)
Primary Class(es): 438/113 257/167, 257/577, 257/656, 257/717, 257/720, 257/E21.505, 257/E21.599, 438/122
Other Classes:
US Patent Ref:

2790940	Apr, 1957	Prince	357/58.
3607468	Sep, 1971	Chang	357/58.
3875657	Apr, 1975	Clarke	29/80.

Other Refs:
Primary Examiner: Tupman, W.
Assistant Examiner:
Attorney: Oblon, Fisher, Spivak, McClelland & Maier