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Primary Examiner: Edlow, Martin H.
Assistant Examiner:
Attorney: Christoffersen; H., Morris; B. E., Zavell; A. Stephen

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Title: Solar cell with a gallium nitride electrode

Abstract: A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

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Inventors: Pankove, Jacques I. (Princeton, NJ, US)

Application Number: 859858
Filing Date: 1977-12-12
Publication_date: 1979-02-13
Assignee: RCA Corporation (New York, NY)
Primary Class(es): 136/256 148/DIG59, 148/DIG113, 257/76, 257/184, 257/200, 257/749, 257/E31.126
Other Classes:
US Patent Ref:

3649838	Mar, 1972	Phela, Jr.	250/211.
3683240	Aug, 1972	Pankove	317/234.
3877058	Apr, 1975	Cricchi	357/24.
3922703	Nov, 1975	Pankove	357/17.
4028720	Jun, 1977	Pankove	357/30.

Other Refs: Other References: Pankove, Journal of Luminescence, 7(1973) pp. 114-126.
Pankove, R.C.A. Review, 34, Jun. 1973, pp. 336-343.
Maruska et al., Mat. Res. Bull. vol. 7, No. 8, pp. 777-782 (1972).
Maruska et al. Solid State Electronics, vol. 17, 1974, pp. 1171-1179.