Title: Schottky barrier type solid-state element

Abstract: A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.

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Inventors: Takagi, Toshinori (Nagaokakyo, JP)
Morimoto, Kiyoshi (Mobara, JP)
Utamura, Yukihiko (Mobara, JP)

Application Number: 705696
Filing Date: 1976-07-15
Publication_date: 1979-02-13
Assignee: Futaba Denshi Kogyo Kabushiki Kaisha (Chiba, JP)
Primary Class(es): 136/255 204/192.11, 204/192.25, 257/73, 257/449, 257/E21.091, 257/E29.003, 427/528, 438/92, 438/478, 438/570, 438/571
Other Classes:
US Patent Ref:

2556991	Jun, 1951	Teal	427/86.
2613301	Oct, 1952	Dubar et al.	357/15.
2847585	Aug, 1958	Christian	357/15.
3049622	Aug, 1962	Ahlstrom	357/15.
3146138	Aug, 1964	Shirland	357/15.
3255393	Jun, 1966	Hutchins et al.	357/15.
3279962	Oct, 1966	Grimmeiss	357/15.
3415678	Dec, 1968	Gutierrez	357/15.
3463667	Aug, 1969	Chopra	427/86.
3597270	Aug, 1971	Monck et al.	427/84.
3864719	Feb, 1975	Uematsu et al.	357/6.
4035197	Jul, 1977	Raychaudhuri	357/15.

Other Refs:
Primary Examiner: James, Andrew J.
Assistant Examiner:
Attorney: Oblon, Fisher, Spivak, McClelland & Maier