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Primary Examiner: Goolkasian, John T.
Assistant Examiner:
Attorney: Christoffersen; H., Williams; R. P., Asman; Sanford J.

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Title: Process for manufacturing a radiation hardened oxide

Abstract: A pyrogenic oxide is grown on a silicon wafer in a furnace by oxidizing hydrogen in the presence of an excess amount of oxygen as well as anhydrous hydrogen chloride to produce steam within the furnace. After growing a suitable pyrogenic oxide layer, the hydrogen and hydrogen chloride flows are turned off while the oxygen flow is continued to grow a dry oxide. A nitrogen anneal while the wafer is slowly pulled from the furnace completes the hybrid, radiation hard oxide layer.

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Inventors: Cohen, Seymour H. (Berkeley Heights, NJ, US)
Fabula, Joseph J. (Somerville, NJ, US)

Application Number: 698924
Filing Date: 1976-06-23
Publication_date: 1979-02-13
Assignee: RCA Corp. (New York, NY)
Primary Class(es): 438/773 148/DIG3, 257/632, 257/906, 257/E21.285, 438/774, 438/953
Other Classes:
US Patent Ref:

RE28385	Apr, 1975	Mayer	427/93.
3258359	Jun, 1966	Hugle	427/93.
3336661	Aug, 1967	Polinsky	29/589.
3666546	May, 1972	Reuter et al.	427/93.
3692571	Sep, 1972	Colton et al.	427/93.
4010290	Mar, 1977	Boland	427/93.

Other Refs: Other References: Deal, Oxidaton of Silicon in Dry Oxygen, Wet Oxygen and Steam, Journ. of Electrochemical Society 6/63, pp. 527-533, vol. 10, No. 6.