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Primary Examiner: Edlow, Martin H.
Assistant Examiner:
Attorney: Riddles; Alvin J.

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Title: Semiconductor structure

Abstract: A semiconductor structure may be fabricated that confines current flow to two dimensions by constructing as a structure a body of alternate regions of different semiconductor materials with current flow parallel to the intersections of the regions. The structure, in device form, exhibits the properties of selectable energy gap, higher carrier mobility and increased electronic density of states. Such devices are usable for their bulk properties, their junction electro-optical properties and their junction transistor properties.


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Inventors: Chang, Leroy L. (Mohegan, NY, US)
Esaki, Leo (Chappaqua, NY, US)

Application Number: 789158
Filing Date: 1977-04-20
Publication_date: 1979-01-30
Assignee: International Business Machines Corporation (Armonk, NY)
Primary Class(es): 257/13 257/197, 257/E29.078
Other Classes:
US Patent Ref:
3469154Sep, 1969Scholer317/234.
3626257Dec, 1971Esaki357/88.
3626328Dec, 1971Esaki357/88.
3882533May, 1975Dohler357/58.
3893148Jul, 1975Madjid357/16.

Other Refs: Other References: Chang et al., Appl. Phys. Lett., vol. 24, No. 12, 15 Jun. 74, pp. 593-595.
Rideout, IBM Tech. Discl. Bull., vol. 13, No. 11, Apr. 1971.