Title: Single sense line memory cell

Abstract: A static memory cell is provided which can be written into or read from using only a single sense line, as contrasted to all previous systems which use two sense lines.

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Inventors: O'Connell, Timothy R. (Phoenix, AZ, US)
Edelstein, Henry R. (Phoenix, AZ, US)
Leach, George S. (Phoenix, AZ, US)

Application Number: 792798
Filing Date: 1977-05-02
Publication_date: 1979-01-09
Assignee: Electronic Memories & Magnetics Corporation (Encino, CA)
Primary Class(es): 365/207 365/154
Other Classes:
US Patent Ref:

3949381	Apr, 1976	Dennard et al.	340/173.
4027176	May, 1977	Heuber et al.	340/173.

Other Refs:
Primary Examiner: Fears, Terrell W.
Assistant Examiner:
Attorney: Kleinberg, Morganstern, Scholnick & Mann