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Title:
Process for producing large-size, self-supporting plates of silicon
Abstract:
Process for producing large-size, self-supporting plates of silicon deposd from the gaseous phase on a substrate body, which comprises heating a graphite substrate to deposition temperature of silicon, which is deposited on the substrate from a gaseous compound to which a dopant has been added until a layer of about 200 to 650 .mu.m has formed, subsequently melting 40-100% of this layer from the free surface downward, resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward, and finally separating the silicon therefrom. The plates so formed are used primarily for making solar cells.
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Inventors:
Authier, Bernhard (Burghausen, DE, US) Griesshammer, Rudolf (Burghausen, DE, US) Koppl, Franz (Altotting, DE, US) Lang, Winfried (Burghausen, DE, US) Sirtl, Erhard (Inn, DE, US) Rath, Heinz-Jorg (Burghausen, DE, US)
Application Number:
743268
Filing Date: 1976-11-19 Publication_date: 1978-12-26 Assignee:
Wacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH (Burghausen, DE)
Primary Class(es):
438/62
117/54, 117/914, 117/915, 117/934, 136/258, 136/261, 264/81, 264/85, 423/348, 423/349, 438/68, 438/490, 438/907
Other Classes:
US Patent Ref:
| 3063811 | Nov, 1962 | Kniepkamp et al. | 423/349. | | 3160521 | Dec, 1964 | Ziegler et al. | 427/86. | | 3160522 | Dec, 1964 | Heywang et al. | 423/349. | | 3549411 | Dec, 1970 | Bean et al. | 264/81. | | 3565674 | Feb, 1971 | Boland et al. | 264/81. | | 3900540 | Aug, 1975 | Robba et al. | 264/81. | | 3969163 | Jul, 1976 | Wakefield | 427/86. | | 4027053 | May, 1977 | Lesk | 423/348. |
Other Refs:
Primary Examiner:
Thurlow, Jeffery R.
Assistant Examiner:
Attorney:
Collard; Allison C., Galgano; Thomas M.
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