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Primary Examiner: Dean, R.
Assistant Examiner: Roy, Upendra
Attorney: Christoffersen; H., Hays; R. A.

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Title: Method of forming a curved implanted region in a semiconductor body

Abstract: A method is disclosed whereby a region having a varying conductivity profile and depth is formed in a body of semiconductor material. The method includes the step of implanting conductivity modifiers beneath a curved surface of the body. Such a region, fabricated by the present method, is particularly useful as one element of a semi-conductor device.

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Inventors: Ponczak, Samuel (Somerville, NJ, US)
Olmstead, John Aaron (Somerville, NJ, US)

Application Number: 763721
Filing Date: 1977-01-28
Publication_date: 1978-09-12
Assignee: RCA Corporation (New York, NY)
Primary Class(es): 438/524 257/625, 257/626, 257/E21.346, 257/E29.023, 257/E29.025, 438/343, 438/530
Other Classes:
US Patent Ref:

3620851	Nov, 1971	King et al.	148/1.
3697827	Oct, 1972	Simon	317/235.
3730778	May, 1973	Shannon et al.	148/1.
3890632	Jun, 1976	Ham et al.	357/23.
3899363	Aug, 1975	Dennard et al.	148/1.
3901737	Aug, 1975	Dash	148/1.
3947866	Mar, 1976	Stellrecht	357/91.
4004949	Jan, 1977	Lesk	148/1.
4029522	Jun, 1977	De La Moneda	148/1.

Other Refs: Other References: C. L. Bertin, "Lateral Transistor with Built-In Electric Field", IBM Tech. Disc. Bull. 16, (1973) 280.
J. E. Ziegler et al., "Self-Isolating Bath-Tub Collector for a Planar Transistor", IBM Tech. Disc. Bull. 14, (1971) 1635.
A. Lekholm et al., "Edge-Breakdown in Mesa Diodes", IEEE Trans. Electronic Devices, ED-18, (1971) 844.