Title: Method of manufacturing a semiconductor device by non-selectively implanting a zone of pre-determined low resistivity

Abstract: A method of manufacturing a semiconductor device is disclosed in which an unwanted inversion layer between two otherwise isolated regions is eliminated. The inversion layer is eliminated by ion implanting a semiconductor layer of higher doping concentration than that of the substrate over the entire substrate surface. A semiconductor device manufactured by the method is also disclosed.

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Inventors: deBrebisson, Michel (Caen, FR)

Application Number: 764587
Filing Date: 1977-02-01
Publication_date: 1978-09-12
Assignee: U.S. Philips Corporation (New York, NY)
Primary Class(es): 438/363 257/519, 257/648, 257/E21.537, 257/E21.553, 438/442
Other Classes:
US Patent Ref:

3386865	Jun, 1968	Doo	148/175.
3748187	Jan, 1973	Aubuchon et al.	148/1.
3891469	Jun, 1975	Moriyama	148/1.
4011105	Mar, 1977	Paivinen	148/1.
4011581	Mar, 1977	Kubo et al.	357/52.
4023195	May, 1977	Richman	357/23.

Other Refs:
Primary Examiner: Dean, R.
Assistant Examiner: Roy, Upendra
Attorney: Trifari; Frank R., Biren; Steven R.