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Primary Examiner: Smith, Alfred E.
Assistant Examiner: Barlow, Harry
Attorney: Blakely, Sokoloff, Taylor & Zafman

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Title: MOS voltage controlled lowpass filter

Abstract: An MOS field-effect device which may be fabricated as part of an integrated circuit having the general characteristics of a lowpass filter. A source and drain region define a long channel (e.g. 500 microns or longer). The cutoff frequency of this lowpass filter which is in the audio range, is controllable by the potential applied to a gate member insulated from the channel.


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Inventors: Huggins, John M. (San Jose, CA, US)

Application Number: 754120
Filing Date: 1976-12-27
Publication_date: 1978-05-30
Assignee: Intel Corporation (Santa Clara, CA)
Primary Class(es): 333/172 257/312, 257/533, 257/E29.051, 257/E29.135, 257/E29.255, 257/E29.27
Other Classes:
US Patent Ref:
3022472Feb, 1962Tanenbaum et al.357/51.
3296462Jan, 1967Reddi357/23.
3754171Aug, 1973Anzai357/51.

Other Refs: 954,532
Aug, 1964UK
Other References: MOSFET in Circuit Design, R. H. Crawford, McGraw Hill, N.Y., 1967, pp. 71-72.