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Title:
Method for manufacturing electrical solid state devices utilizing shadow masking and ion-implantation
Abstract:
The present invention describes the manufacture of a chip having a stratum in which a number of diffusions are spaced from each other by boundaries whose widths is the width of a gap. The diffusion on one side of a boundary is formed by ion bombardment, and that on the other side by heat transfer of ions of a material with which the film has been doped.
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Inventors:
Godber, Geoffrey Allan (Long Buckby, EN)
Application Number:
726796
Filing Date: 1976-09-27 Publication_date: 1978-04-18 Assignee:
Plessey Handel und Investments A.G. (Zug, CH)
Primary Class(es):
438/531
216/48, 216/66, 257/368, 257/E21.033, 257/E21.151, 257/E21.346, 438/372, 438/535
Other Classes:
US Patent Ref:
Other Refs:
Other References:
Carlsen, G.S., "Multiple Division for Integrated . . . Diffusion", I.B.M. Tech. Discl. Bull., vol. 9, No. 10, Mar. 1967, pp. 1456-1457. |