Title: Method of manufacturing a semi-insulating silicon layer

Abstract: An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.

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Inventors: Aoki, Teruaki (Tokyo, JA)
Matsushita, Takeshi (Sagamihara, JA)
Mifune, Tadayoshi (Yokohama, JA)
Hayashi, Hisao (Atsugi, JA)

Application Number: 678061
Filing Date: 1976-04-19
Publication_date: 1978-04-18
Assignee: Sony Corporation (Tokyo, JA)
Primary Class(es): 438/372 148/DIG61, 148/DIG85, 148/DIG112, 148/DIG114, 257/E21.266, 257/E21.283, 257/E21.293, 257/E21.335, 257/E29.326, 438/385, 438/637, 438/763, 438/764, 438/958
Other Classes:
US Patent Ref:

3563809	Feb, 1971	Wilson	148/1.
3767494	Oct, 1973	Muraoka et al.	148/1.
3897274	Jul, 1975	Stehlin et al.	357/91.
3900345	Aug, 1975	Lesk	148/1.
4014037	Mar, 1977	Matsushita et al.	357/52.

Other Refs:
Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Hill, Gross, Simpson, Van Santen, Steadman, Chiara & Simpson