Title: Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink

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Abstract: A metal film is deposited on both sides of a semiconductor wafer. A conductive support layer, e.g. gold, is deposited on one of the metal film layers. Using standard procedures, the semiconductor material is then etched to form a plurality of semiconductor devices on the support. A photoresist is next applied over the device side of the support. Windows are opened into the photoresist above each of the devices. A gold wire is attached near the edge of each device so that the devices are each electrically connected in parallel to all of said devices and to said support. A copper heat capacitor is now plated on each device. The gold wires and the photoresist are removed, leaving a copper heat capacitor on the semiconductor device. A copper heat can be formed on the device, with or without formation of the copper heat capacitor, but always after formation of the device per se.


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