Title: Method for manufacturing semiconductor devices

Abstract: A method for the manufacture of semiconductor devices comprises the steps of forming a number of mutually electrically isolated semiconductor islands on an insulating substrate and cutting a semiconductor wafer, made of semiconductor elements and substrate, along its dicing line to provide a number of semiconductor chips, the method characterized in that additional semiconductor islands are formed on the insulating substrate simultaneously with, or after, the formation of the first-mentioned semi-conductor islands so that each substantially surrounds the chip. The method permits very easy mask alignments for photoengraving as well as a clear judgment as to whether or not the formation of contact openings has been completed.

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Inventors: Kimura, Minoru (Kawasaki, JA)
Tango, Hiroyuki (Yokohama, JA)
Ohmori, Yukio (Yokohama, JA)

Application Number: 770605
Filing Date: 1977-02-22
Publication_date: 1978-02-14
Assignee: The President of the Agency of Industrial Science and Technology (Tokyo, JA)
Primary Class(es): 438/462 257/E21.238, 257/E21.347, 257/E21.599, 257/E23.179, 438/479
Other Classes:
US Patent Ref:

3608186	Sep, 1971	Hutson	29/583.
3816906	Jun, 1974	Falckenberg	29/583.
3903591	Sep, 1975	Wenzig et al.	29/583.
3965568	Jun, 1976	Gooch	29/583.

Other Refs:
Primary Examiner: Lake, Roy
Assistant Examiner: Desmond, E. F.
Attorney: Flynn & Frishauf