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Title: Apparatus for depositing thin layers of materials by reactive spraying in a high-frequency inductive plasma

Abstract: A method and apparatus for depositing thin layers of insulating or slightly conductive materials involves reactive spraying through high-frequency inductive plasma. The conductive component of the material to be deposited is sprayed in a first chamber through which an ionizable inert gas travels, the sprayed particles then passing through a second chamber in which a substrate is placed and to which a reactive gas is supplied. Insulating and weakly inductive materials such as oxides, carbide and nitrides may be deposited at a rate substantially comparable with the rate for conductive materials to obtain high quality uniform deposits.


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Inventors: Beucherie, Pierre (Biandronno (Varese), IT)

Application Number: 633263
Filing Date: 1975-11-19
Publication_date: 1977-09-27
Assignee: European Atomic Energy Community (EURATOM) (Kirchberg, LU)
Primary Class(es): 118/723VE 118/723IR, 219/121.47, 219/121.48, 219/121.52, 219/121.58
Other Classes:
US Patent Ref:
3010009Nov, 1961Ducati219/121.
3247014Apr, 1966Goldberger et al.219/121.
3690291Sep, 1972Judd et al.118/49.
3710070Jan, 1973Hirt et al.219/121.
3756193Sep, 1973Carmichael et al.118/49.
3839618Oct, 1974Muehlberger219/121.
4006340Feb, 1977Gorinas219/121.

Other Refs:
Primary Examiner: Rimrodt, Louis K.
Assistant Examiner:
Attorney: Stevens, Davis, Miller & Mosher