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Title:
Semiconductor pressure transducer
Abstract:
A semiconductor pressure transducer comprises a circular diaphragm formed of a single crystal semiconductor material, at least a first strain gauge element having a piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in parallel with a predetermined axis which extends transversely of the surface of the diaphragm, at least a second strain gauge element having the piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in the direction perpendicular to the axis, and means for securing the diaphragm at the outer peripheral portion thereof. The distance between the second strain gauge element and the center of the diaphragm is differed from the distance between the center of the first strain gauge element and the latter.
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Inventors:
Shimada, Satoshi (Hitachi, JA) Yamada, Kazuji (Hitachi, JA) Matsuda, Yasumasa (Hitachi, JA) Kimura, Ichiro (Mito, JA) Shimazoe, Michitaka (Hitachi, JA) Takahashi, Yukio (Katsuta, JA)
Application Number:
692368
Filing Date: 1976-06-03 Publication_date: 1977-09-27 Assignee:
Hitachi, Ltd. (JA)
Primary Class(es):
73/727
73/765, 338/4
Other Classes:
US Patent Ref:
Other Refs:
Other References:
V. Vaganov et al. "Properties of Diffusion Strain-Gauge Resistances of Pressure Transducers with Silicon Diaphragms"-Measurement Techniques-Dec. 1973. |