Title: Method of and apparatus for the radio frequency sputtering of a thin film

Abstract: A method of an apparatus for controlling the deposition of a thin film upon a substrate by a radio frequency (RF) sputtering apparatus is disclosed. The apparatus utilizes the predetermined bias voltage vs. vacuum pressure characteristic of the RF sputtering apparatus to control, by a single pressure controller, both the vacuum pressure and the bias voltage. A substrate tuning bias circuit generates an effective DC bias voltage that is determined by the RF impedance of the substrate holder to ground. Through a voltage level shifting circuit, a detected change in the DC bias voltage, e.g., a decrease, causes the pressure controller to adjust, e.g., increase, the vacuum pressure. The change in the vacuum pressure then produces a corresponding adjustment, e.g., an increase, of the bias voltage to stabilize the bias voltage back at a predetermined level.

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Inventors: Kochel, Leroy Joseph (Fridley, MN, US)

Application Number: 646202
Filing Date: 1976-01-02
Publication_date: 1977-08-23
Assignee: Sperry Rand Corporation (New York, NY)
Primary Class(es): 204/192.13 204/298.03
Other Classes:
US Patent Ref:

3423303	Jan, 1969	Davidse et al.	204/192.
3525680	Aug, 1970	Davidse et al.	204/192.
3763031	Oct, 1973	Scow et al.	204/298.
3767551	Oct, 1973	Lan, Jr. et al.	204/192.
3860507	Jan, 1975	Vosse, Jr.	204/192.

Other Refs: 2,422,808

Nov, 1975	DT

Primary Examiner: Mack, John H.
Assistant Examiner: Weisstuch, Aaron
Attorney: Grace; Kenneth T., Nikolai; Thomas J., Truex; Marshall M.