Title: Low forward voltage drop thyristor

Abstract: A thyristor is provided with a low forward voltage drop (V.sub.f) while providing a typical gate current to trigger (I.sub.g). The working point in the cathode-base region of the thyristor has an impurity concentration less than 5 .times. 10.sup.15 and preferably less than 1 .times. 10.sup.15 per cm.sup.3. The gating portion of the device is selectively irradiated, preferably with electron radiation, to maintain the gate current. The forward blocking voltage (V.sub.BO) and rate of rise of application of forward voltage (dV/dt) of the thyristor may also be maintained at typical values by a fine shunt pattern and/or doping of the shunt portions.

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Other info:

Inventors: Cresswell, Michael W. (Pittsburgh, PA, US)
Roberts, John S. (Export, PA, US)

Application Number: 713568
Filing Date: 1976-08-11
Publication_date: 1977-08-23
Assignee: Westinghouse Electric Corporation (Pittsburgh, PA)
Primary Class(es): 438/139 148/33.5, 257/E21.331, 257/E21.388, 257/E29.038, 257/E29.048, 257/E29.107, 257/E29.109, 438/798
Other Classes:
US Patent Ref:

3246172	Apr, 1966	Sanford	357/38.
3390020	Jun, 1968	Mandelkorn	357/29.
3442722	May, 1969	Bauerlein et al.	357/29.
3470036	Sep, 1969	Svedberg	357/29.
3809582	May, 1974	Tarneja et al.	148/1.
3881964	May, 1975	Cresswell et al.	148/1.
3933527	Jan, 1976	Tarneja et al.	148/1.
3990091	Nov, 1976	Cresswell et al.	357/38.

Other Refs:
Primary Examiner: Ozaki, G.
Assistant Examiner:
Attorney: Menzemer; C. L.