Title: Method of making a junction type field effect transistor

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Abstract: In the manufacture of a vertical structure junction type field effect transistor, the formation of a gate region is followed by an oxidation treatment of the upper surface of the gate region and then by the growth of a semiconductor layer consisting of a monocrystalline region on the channel portion and a polycrystalline region on the oxide film formed on the gate region. The existence of the oxide film on the gate region prevents the out-diffusion of the impurity doped in the gate region, preventing the lowering of the breakdown voltage, and enabling a short channel length and small series resistance of the channel.


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