Title: Minority carrier isolation barriers for semiconductor devices

Abstract: A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.

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Inventors: Cline, Harvey E. (Schenectady, NY, US)
Anthony, Thomas R. (Schenectady, NY, US)
Kokosa, Richard A. (Skaneateles, NY, US)
Wolley, E. Duane (Auburn, NY, US)

Application Number: 681600
Filing Date: 1976-04-29
Publication_date: 1977-06-28
Assignee: General Electric Company (Schenectady, NY)
Primary Class(es): 438/415 117/40, 148/DIG88, 257/622, 257/E21.087, 257/E21.219, 257/E21.544, 257/E27.052, 438/540
Other Classes:
US Patent Ref:

2813048	Nov, 1957	Pfann	228/240.
2967344	Jan, 1961	Mueller	29/578.
3266127	Aug, 1966	Harding	29/578.
3727116	Apr, 1973	Thomas	357/64.
3775196	Nov, 1973	Wakamiya	357/64.

Other Refs:
Primary Examiner: Tupman, W.
Assistant Examiner:
Attorney: Winegar; Donald M., Cohen; Joseph T., Squillaro; Jerome C.